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AOE 航伟光电
重庆航伟光电科技有限公司（AOE）成立于1999年，是中国电科重庆声光电子集团的下属公司，注册资本9599万元人民币，自有净化厂房及办公用房6200平方米，现有员工近300人，通过了ISO9001:2015认证，是重庆市认定的 "高新技术企业" 。专业从事半导体光电子有源器件、组件、和部件的开发、生产和销售。产品广泛应用于光纤通信、激光测距、光电监测、激光泵浦、医疗美容、夜视照射等领域。 主营产品 一：用于光纤通信网络的光发射与接收TO。包括1310nm1550nmFP/DFB/DWDM/CWDM LD、 PIN TIA、APD TIA TO等产品。 二、高功率半导体激光器。包括波长在405nm~1064nm范围，单点功率0.2-15W，封装结构包括TO/C/B/CT MOUNT及光纤同轴耦合，扁平耦合等。 三、各种光敏面积InGaAs PIN/APD TO和Si PIN/ APD TO/LCC光电探测器。 四、OEM/ODM 各种TO CAN，光电组件和各种光电传感器。
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  • AOE 航伟光电 AA-SXXXXC0X00COB3-X-A 光电传感器

    Capacitance:1.5pF
    Dark Current:0.02 to 0.4 nA
    Diameter Of Photosensitive Surface:200;500 um
    Dissipation Power:1 mW
    Forward current:1 mA
    Operating Temperature:-20 to 85 C
    Operating Voltage:0.9 V
    Optimum Magnification Times:100
    Response Time:0.3 ns
    Responsibility:35 to 50 A/W
    Reverse Breakdown Voltage:80 to 200 V
    Soldering Temperature:260 C
    Spectral width:400 to 1100 nm
    Storage Temperature Range:-55 to 125 C
    Working voltage temperature Coefficient:0.6 V

  • AOE 航伟光电 AP-S0411T0680TO46-BL-A 光电传感器

    Active Area:680 X 480 um
    Capacitance:1.5pF
    Dark Current:5.0 nA
    Forward current:1 mA
    Operating Temperature:-40 to 85 C
    Optical Wavelength Range:400 to 1100 nm
    Responsibility:0.4 to 0.5 A/W
    Reverse Current:5 mA
    Reverse Voltage:40 V
    Saturation power:≤0.3W/cm2
    Soldering Temperature:260 C
    Storage Temperature Range:-40 to 85 C

  • AOE 航伟光电 AL0905P75S1-30 光电传感器

    Aperture Size:190×10um2
    Beam Divergence Parallel:8 to10
    Beam Divergence Perpendicula:25 to 30
    Center wavelength:895 to 915 nm
    Duty cycle:0.1%
    Forward current:max 40A Typ 30A
    Operating Temperature:-40 to 85 C
    Operating Voltage:15 to 20 V
    Peak output power:65 to 75W
    Pulse width:200 ns
    Reverse Voltage:3 V
    Solder Reflow Temperature:260 C
    Spectral width:7 nm
    Storage Temperature Range:-40 至 100 C
    Threshold current:0.75 to 1 A
    Wavelength Temperature Coefficient:0.3nm/℃

  • AOE 航伟光电 AA-SXXXXC0X00COB3-X-B 光电传感器

    Capacitance:1pF
    Dark Current:0.1 to 1.0 nA
    Diameter Of Photosensitive Surface:200;500 um
    Dissipation Power:1 mW
    Forward current:1 mA
    Operating Temperature:-20 to 85 C
    Operating Voltage:0.95 V
    Optimum Magnification Times:100
    Response Time:0.6 ns
    Responsibility:50 to 55 A/W
    Reverse Breakdown Voltage:80 to 200 V
    Soldering Temperature:260 C
    Spectral width:400 to 1100 nm
    Storage Temperature Range:-55 to 125 C
    Working Voltage Temperature Coefficient:0.9 V

  • AOE 航伟光电 AA-SXXXXL0X00LCC6-X-A 光电传感器

    Capacitance:1.5pF
    Dark Current:0.02 to 0.4 nA
    Diameter Of Photosensitive Surface:200;500 um
    Dissipation Power:1 mW
    Forward current:1 mA
    Operating Temperature:-20 to 85 C
    Operating Voltage:0.9 V
    Optimum Magnification Times:100
    Response Time:0.3 ns
    Responsibility:35 to 50 A/W
    Reverse Breakdown Voltage:80 to 200 V
    Soldering Temperature:260 C
    Spectral width:400 to1100 nm
    Storage Temperature Range:-55 to 125 C
    Working Voltage Temperature Coefficient:0.6V

  • AOE 航伟光电 AA-SXXXXL0X00LCC6-X-B 光电传感器

    Capacitance:1pF
    Dark Current:0.1 to 1.0 nA
    Diameter Of Photosensitive Surface:200;500 um
    Dissipation Power:1 mW
    Forward current:1 mA
    Operating Temperature:-20 to 85 C
    Operating Voltage:0.95 V
    Optimum Magnification Times:100
    Response Time:0.6 ns
    Responsibility:50 to 50 A/W
    Reverse Breakdown Voltage:80 to 200 V
    Soldering Temperature:260 C
    Spectral width:400 to 1100 nm
    Storage Temperature Range:-55 to 125 C
    Working Voltage Temperature Coefficient:0.9 V

  • AOE 航伟光电 AA-SXXXXL0X00LCC3-X-B 光电传感器

    Capacitance:1pF
    Dark Current:0.1 to 1.0 nA
    Diameter Of Photosensitive Surface:200;500 um
    Dissipation Power:1 mW
    Forward current:1 mA
    Operating Temperature:-20 to 85 C
    Operating Voltage:0.95 V
    Optimum Magnification Times:100
    Response Time:0.6 ns
    Responsibility:50 to 50 A/W
    Reverse Breakdown Voltage:80 to 200 V
    Soldering Temperature:260 C
    Spectral width:400 to1100 nm
    Storage Temperature Range:-55 to 125 C
    Working Voltage Temperature Coefficient:0.9V

  • AOE 航伟光电 AA-SXXXXL0X00LCC3-X-A 光电传感器

    Capacitance:1.5pF
    Dark Current:0.02 to 0.4 nA
    Diameter Of Photosensitive Surface:200;500 um
    Dissipation Power:1 mW
    Forward current:1 mA
    Operating Temperature:-20 to 85 C
    Operating Voltage:0.9 V
    Optimum Magnification Times:100
    Response Time:0.3 ns
    Responsibility:35 to 50 A/W
    Reverse Breakdown Voltage:80 to 200V
    Soldering Temperature:260 C
    Spectral width:400 to1100 nm
    Storage Temperature Range:-55℃ to 125 C
    Working Voltage Temperature Coefficient:0.6 V

  • AOE 航伟光电 AA-SXXXXT0X00TO46-XX-X-X-B 光电传感器

    Capacitance:1pF
    Dark Current:0.1 to 1.0 nA
    Diameter Of Photosensitive Surface:200;500 um
    Dissipation Power:1 mW
    Forward current:1 mA
    Operating Temperature:-20 to 85 C
    Operating Voltage:0.95 V
    Optimum Magnification Times:100
    Response Time:0.6 ns
    Responsibility:50 to 55 A/W
    Reverse Breakdown Voltage:80 to 200 V
    Soldering Temperature:260 C
    Spectral width:400 to 1100 nm
    Storage Temperature Range:-55 to 125C
    Working Voltage Temperature Coefficient:0.6 V

  • AOE 航伟光电 AA-SXXXXT0X00TO46-XX-X-X-D 光电传感器

    Capacitance:1 pF
    Dark Current:0.2 to 1.0 nA
    Diameter Of Photosensitive Surface:500 um
    Dissipation Power:1 mW
    Forward current:1 mA
    Operating Temperature:-20 to 80 C
    Operating Voltage:150 to 200 V
    Optimum Magnification Times:30
    Response Time:2 ns
    Responsibility:13 A/W
    Reverse Breakdown Voltage:350 V
    Soldering Temperature:260 C
    Spectral width:400 to 1100 nm
    Storage Temperature Range:-40 to 100 C

  • AOE 航伟光电 AA-SXXXXT0X00TO46-XX-X-X-A 光电传感器

    Capacitance:1.5 pF
    Dark Current:0.02 to 0.4 nA
    Diameter Of Photosensitive Surface:200 um;500 um
    Dissipation Power:1 mW
    Forward current:1 mA
    Operating Temperature:-20 to 85 C
    Operating Voltage:0.95 V
    Optimum Magnification Times:100
    Response Time:0.3ns
    Responsibility:35 to 50 A/W
    Reverse Breakdown Voltage:80 to 200 V
    Soldering Temperature:260 C
    Spectral width:400 to 1100 nm
    Storage Temperature Range:-55 to 125 C
    Working Voltage Temperature Coefficient:0.6V/℃

  • AOE 航伟光电 AP-S0411T1000TO46-BBL-A 光电传感器

    Active Area:1000 um
    Capacitance:1.5 pF
    Dark Current:2.0 nA
    Forward current:1 mA
    Operating Temperature:-40 to 85 C
    Optical Wavelength Range:400 to 1100 nm
    Responsibility:0.4 to 0.5 A/W
    Reverse Current:5 mA
    Reverse Voltage:60 V
    Saturation power:≤0.3W/cm2
    Soldering Temperature:260 C
    Storage Temperature Range:-40 to 85 C
    surface uniformity:5%

  • AOE 航伟光电 AL0905P75WT18-03FW 光电传感器

    Aperture Size:190×10um2
    Beam Divergence Parallel:8 to 10
    Beam Divergence Perpendicula:25 to 30
    Center wavelength:895 to 915 nm
    Duty cycle:0.1%
    Forward current:30 A
    Operating Temperature:-40 to 85 C
    Operating Voltage:20 to 25 V
    Peak output power:65 to 75 W
    Pulse width:200 ns
    Reverse Voltage:3 V
    Solder Reflow Temperature:260 C
    Spectral width:7 nm
    Storage Temperature Range:-40 至 100 C
    Threshold current:0.75 to 1 A
    Wavelength Temperature Coefficient:0.3 nm

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