The ST-037-022-5000N is a Silicon Semiconductor \"N\"-doped bulk type Temperature Sensing Element that develops a large resistive change with temperature. This thermoresistive device is etched from a solid piece of doped material and has a minimum of molecular slippages and\/or dislocations resulting in a highly reliable device. When used as recommended, a signal resolvable to 0.001° F is possible.","Although the change in resistance with temperature is non-linear, when the temperature sensing element is used with passive resistive elements to form a bridge as shown in figure 1. the resulting signal is linearized by R3. The individual passive elements R1 and R2 have no effect on linearization and can be used to provide an offset or bridge balance at any temperature within the operating range.","The temperature sensing element can be bonded with epoxy to materials which can affect the data slightly due to the differences in thermal expansion between the silicon and the material to which it is being bonded. The effect is less than 1%\/100°F for materials with a Thermal Coefficient of 10 microinch\/inch\/ °F or less.","The mass of the temperature sensing element is small and will respond to a 180 deg F change of temperature in water in less than two milliseconds.","FEATURES","APPLICATIONS
特性
- 高可靠性
- 低成本
- 快速反应
- 高分辨率
- 有用的行
- 储罐
- 空调
ST-037-022-5000N RTD 元件技术参数
规格项 | 参数值 | 勾选搜索替代 |
特 性 | ||
标称阻值 | 2800 to 6900 R0 @ 0° C | |
环 境 | ||
工作温度 | -100 to 400 F (-73.33 to 204 C) | |
更多规格 | ||
产品类别 | Resistive Temperature Devices (RTD) Elements |
产品替代
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文件名称 | 大小 | 操作 |
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Semiconductor_Temperature_Sensor_st-037-022-5000n | 364.60 KB | 下载 |
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